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Temperature dependence of the transfer characteristics of polysilicon thin film transistors fabricated by excimer laser crystallization

1999; American Institute of Physics; Volume: 85; Issue: 1 Linguagem: Inglês

10.1063/1.369414

1520-8850

V. Foglietti, L. Mariucci, G. Fortunato,

CCD and CMOS Imaging Sensors

The transfer characteristics of polysilicon thin film transistors have been measured in the temperature range from 400 to 80 K. The active layer has been made by excimer laser crystallization of amorphous silicon. The devices show high field-effect mobility values (>200 cm2/V s), even at low temperature. The electrical characteristics have been analyzed using a uniformly distributed density of states (DOS) model. The DOS has been derived using the values of the conductance at various temperatures. Using the DOS derived from the “temperature method,” we have calculated the transfer characteristics and the threshold voltage versus temperature, obtaining a very good agreement with experimental data.