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Al 2 O 3 Insulated-Gate Structure for AlGaN/GaN Heterostructure Field Effect Transistors Having Thin AlGaN Barrier Layers

2004; Institute of Physics; Volume: 43; Issue: 6B Linguagem: Inglês

10.1143/jjap.43.l777

1347-4065

Tamotsu Hashizume, S. Anantathanasarn, Noboru Negoro, Eiichi Sano, Hideki Hasegawa, Kazuhide Kumakura, Toshiki Makimōto,

Ga2O3 and related materials

An Al 2 O 3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al 0.2 Ga 0.8 N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al 2 O 3 IG device showed successful gate control of drain current up to V GS = +4 V without leakage problems. The threshold voltage in the Al 2 O 3 IG HFET was about -0.3 V, resulting in the quasi-normally-off mode operation.