75 nm T‐shaped gate for In 0.17 Al 0.83 N/GaN HEMTs with minimal short‐channel effect
2013; Institution of Engineering and Technology; Volume: 49; Issue: 24 Linguagem: Inglês
10.1049/el.2013.2769
ISSN1350-911X
AutoresDae‐Myeong Geum, S. H. Shin, M.S. Kim, Jae‐Hyung Jang,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoLattice-matched InAlN/gallium nitride high electron-mobility transistors with a 6 nm-thick InAlN barrier layer were fabricated and characterised. By introducing a very thin InAlN Schottky layer, the short-channel effect could be minimised. The devices with a gate length of 75 nm exhibited output resistance as high as 56.9 Ω mm together with a drain-induced barrier lowering as low as 63 mV/V. The devices also demonstrated excellent high-frequency characteristics such as a unity current gain cutoff frequency (fT) of 170 GHz and a maximum oscillation frequency (fmax) of 210 GHz.
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