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The Use of Unsaturated Fluorocarbons for Dielectric Etch Applications

2002; Institute of Physics; Volume: 149; Issue: 4 Linguagem: Inglês

10.1149/1.1457988

1945-7111

Ritwik Chatterjee, Simon Karecki, R. Reif, Victor Vartanian, T. Sparks,

Green IT and Sustainability

Six unsaturated fluorocarbon (UFC) gases as well as a fluorinated ether were examined for dielectric etch and global warming emissions performance and compared to three perfluorocompound (PFC) gases. All of the gases were capable of etch performance comparable to that of a typical process, while exhibiting superior global warming emissions performance compared to the PFCs. A low-flow hexafluoro-2-butyne process was found to have a significant emissions benefit, showing a normalized emissions reduction of 88.2% compared to the process. Two other isomers (hexafluoro-1,3-butadiene and hexafluorocyclobutene) also exhibited reductions greater than 80%, while hexafluoropropene and octafluorocyclopentene exhibited emissions reductions greater than 70% compared to the typical process. For the isomers, a large portion of the emissions were a result of formation with photoresist as the sole source of the hydrogen. An extended 4 min etch with hexafluoro-1,3-butadiene resulted in a deep via with an aspect ratio of 5:1, very high selectivity to photoresist, and no evidence of etch stopping. © 2002 The Electrochemical Society. All rights reserved.