Thermal stability of Pd-In OHMIC contacts to n-GaAs formed by scanned electron beam and rapid thermal annealing
1991; Institution of Engineering and Technology; Volume: 27; Issue: 2 Linguagem: Inglês
10.1049/el
ISSN1350-911X
AutoresK. Prasad, L. Faraone, A.G. Nassibian,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThermally stable and low resistance Pd-In ohmic contacts to n-GaAs were formed using scanned electron beam (SEB) and rapid thermal annealing (RTA). A specific contact resistance (pc) of the order of ̃ 10−6Ωcm2 was obtained using both SEB and RTA techniques with SEB annealed contacts exhibiting a superior surface morphology. High temperature aging (500°C) of the contacts showed that SEB annealed contacts were more stable than RTA contacts as shown by the increase in their respective pc values (an increase by a factor of ̃ 5 for SEB annealed contacts against an increase by a factor of ̃ 8 for RTA contacts after 25 hours of aging).
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