Suppression of nuclear spin diffusion at a GaAs / Al x Ga 1 − x As interface measured with a single quantum-dot nanoprobe
2009; American Physical Society; Volume: 79; Issue: 8 Linguagem: Inglês
10.1103/physrevb.79.081303
ISSN1550-235X
AutoresА.Е. Nіkolaenko, E. A. Chekhovich, M. N. Makhonin, I. Drouzas, Alexander Vankov, J. Skiba-Szymanska, M. S. Skolnick, P. Senellart, D. Martrou, A. Lemaı̂tre, A. I. Tartakovskii,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoNuclear spin polarization dynamics are measured in optically pumped individual $\text{GaAs}/{\text{Al}}_{x}{\text{Ga}}_{1\ensuremath{-}x}\text{As}$ interface quantum dots by detecting the time dependence of the Overhauser shift in photoluminescence spectra. Long nuclear polarization decay times of $\ensuremath{\approx}1\text{ }\text{min}$ have been found indicating inefficient nuclear spin diffusion from the GaAs dot into the surrounding AlGaAs matrix in externally applied magnetic field. A spin-diffusion coefficient two orders lower than that previously found in bulk GaAs is deduced.
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