Modeling growth in Si gas-source molecular beam epitaxy using Si2H6
1997; Elsevier BV; Volume: 179; Issue: 1-2 Linguagem: Inglês
10.1016/s0022-0248(97)00092-4
ISSN1873-5002
Autores Tópico(s)Advanced ceramic materials synthesis
ResumoSubstrate temperature dependencies of growth rate and surface hydrogen coverage for Si GSMBE using Si2H6 have been obtained experimentally. Validity of a growth model has been confirmed by comparing the model prediction with the experimental data. The Si growth can be described as a combination of the Si2H6 adsorption and the surface-hydrogen desorption. A Si2H6 molecule adsorbs on a Si(1 0 0) surface consuming two available dangling bonds, while the desorption of surface hydrogen is characterized as a first-order reaction.
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