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Effects of Postannealing in Oxygen Ambient on Leakage Properties of (Ba, Sr)TiO 3 Thin-Film Capacitors

1998; Institute of Physics; Volume: 37; Issue: 4B Linguagem: Inglês

10.1143/jjap.37.l453

1347-4065

Yukio Fukuda, Ken Numata, Katsuhiro Aoki, Akitoshi Nishimura Akitoshi Nishimura, Gaku Fujihashi, Soichiro Okamura, Shizutoshi Ando, Takeyo Tsukamoto,

Semiconductor materials and devices

Effects of postannealing in oxygen ambient on the leakage properties of sputter-deposited (Ba, Sr)TiO 3 (BST) thin-film capacitors with Pt electrodes are investigated as a function of oxygen gas pressure, postannealing temperature and postannealing time. It is shown that the leakage properties can be improved by increasing these conditions. By comparing the leakage behavior with a Schottky emission model, it is concluded that the main effect of postannealing is an increase in the Pt/BST Schottky barrier height. It is also shown that the Fermi level of the BST film may be pinned at the Pt/BST interface because of oxygen vacancies in the film.