Artigo
MeV backscattering analysis of annealing behaviors of ion-implanted arsenic in silicon
1983; Elsevier BV; Volume: 218; Issue: 1-3 Linguagem: Inglês
10.1016/0167-5087(83)91052-9
ISSN1872-9606
AutoresT. Inada, Hiroo MIYAKAWA, Takeshi Ohfuji, K. Benzaki, Hiroshi Onoda, Yoji Yuge, S. Ushio,
Tópico(s)Integrated Circuits and Semiconductor Failure Analysis
Referência(s)