X-ray diffraction study of undercooled molten silicon
2001; American Institute of Physics; Volume: 78; Issue: 5 Linguagem: Inglês
10.1063/1.1341220
ISSN1520-8842
AutoresH. Kimura, Masahito Watanabe, Koichi Izumi, Taketoshi Hibiya, D. Holland‐Moritz, T. Schenk, Karl Rudolf Bauchspieß, Stephan Schneider, I. Egry, Ken‐ichi Funakoshi, Michael Hanfland,
Tópico(s)Material Dynamics and Properties
ResumoThe short-range order of molten silicon was investigated in a wide temperature range from 1893 K down to 1403 K, corresponding to an undercooling of 290 K. Energy-dispersive x-ray diffraction was used in combination with electromagnetic levitation. The structure factor and the pair correlation function were determined as a function of temperature from the experimental data. A small hump on the higher wave vector side of the first peak in the structure factor was observed at all temperatures. The position of the first peak in the pair distribution function shifted to shorter distances and its height increased gradually with decreasing temperature. No discontinuous behavior was observed in the entire temperature range investigated.
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