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Preparation of Thin Dielectric Film for Nonvolatile Memory by Thermal Oxidation of Si-Rich LPCVD Nitride

2001; Institute of Physics; Volume: 148; Issue: 5 Linguagem: Inglês

10.1149/1.1362552

1945-7111

Hei Wong, M.C. Poon, Yong Gao, Ted Chi-Wah Kok,

Ferroelectric and Negative Capacitance Devices

In this work, we develop methods for fabricating high quality dielectric films for nonvolatile memory applications. Oxide/Si-rich nitride/oxide structures are fabricated where the Si-rich nitride layer was deposited by the low pressure chemical vapor deposition (LPCVD) technique. With a Si-rich nitride layer, the Fowler-Nordheim tunneling voltage can be cut down to 3 V for oxide thickness of about 100 Å. By reoxidizing the Si-rich nitride layer, secondary ion mass spectroscopy study reveals that the hydrogen content of nitride film and its interface can be reduced by more than 40%. With this method, high nitrogen content oxynitride and smoother oxynitride/oxide interfaces result and the interface charge trapping can be improved remarkably. © 2001 The Electrochemical Society. All rights reserved.