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Single‐Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping

2011; Volume: 24; Issue: 3 Linguagem: Inglês

10.1002/adma.201103411

1521-4095

Jaesung Park, Sae Byeok Jo, Young‐Jun Yu, Youngsoo Kim, Jae Won Yang, Wi Hyoung Lee, Hyun Ho Kim, Byung Hee Hong, Philip Kim, Kilwon Cho, Kwang S. Kim,

Quantum and electron transport phenomena

Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure. Detailed facts of importance to specialist readers are published as "Supporting Information". Such documents are peer-reviewed, but not copy-edited or typeset. They are made available as submitted by the authors. Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article.