Unconventional spectral changes across the metal-insulator transition in CeTiO 3 + δ

1997; American Physical Society; Volume: 56; Issue: 19 Linguagem: Inglês

10.1103/physrevb.56.12050

ISSN

1095-3795

Autores

O. Akaki, A. Chainani, T. Yokoya, H. Fujisawa, T. Takahashi, M. Sohma,

Tópico(s)

Electronic and Structural Properties of Oxides

Resumo

We study the change in the electronic structure of ${\mathrm{CeTiO}}_{3+\mathrm{\ensuremath{\delta}}}$ across the \ensuremath{\delta}-controlled metal-insulator (M-I) transition. X-ray-absorption spectroscopy shows the formation of hole states with substantial $O$ $2p$ character as a function of \ensuremath{\delta}. Ultraviolet photoemission spectroscopy confirms the gap $(<100\mathrm{meV})$ closure across the M-I transition due to the doped hole states. The results show that a Mott-Hubbard system can have a charge-transfer character due to the strong hybridization, indicating a very mixed character ground state.

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