Lateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy
1993; American Institute of Physics; Volume: 74; Issue: 2 Linguagem: Inglês
10.1063/1.354912
ISSN1520-8850
AutoresNaoki Hara, K. Shiina, Tatsuya Ohori, Kazumi Kasai, J. Komeno,
Tópico(s)Silicon Nanostructures and Photoluminescence
ResumoLateral diffusion of sources during selective growth of Si-doped GaAs layers by metalorganic vapor phase epitaxy was analyzed. The diffusion lengths of gallium and silicon species were estimated from carrier concentration profiles measured by Raman spectroscopy and thickness profiles. Using the diffusion lengths obtained, it is speculated that the diffusion materials are monomethylgallium and silylarsine. From their identical diffusion lengths, it was determined that there is no difference in diffusion materials between arsine and tertiarybutylarsine.
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