STT MRAM patterning challenges

2013; SPIE; Volume: 8685; Linguagem: Inglês

10.1117/12.2013602

ISSN

1996-756X

Autores

Werner Boullart, D. Radisic, Vasile Paraschiv, Sven Cornelissen, Mauricio Manfrini, Koichi Yatsuda, Eiichi Nishimura, Tetsuya Ohishi, Shigeru Tahara,

Tópico(s)

Magnetic and transport properties of perovskites and related materials

Resumo

In this paper we report on the patterning challenges for the integration of Spin-Transfer Torque Magneto-Resistive- Random-Access Memory (STT MRAM). An overview of the different patterning approaches that have been evaluated in the past decade is presented. Plasma based etching, wet echting, but also none subtractive pattering approaches are covered. The paper also reports on the patterning strategies, currently under investigation at imec.

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