Semiconductor-laser-pumped high-power upconversion laser
2006; American Institute of Physics; Volume: 88; Issue: 6 Linguagem: Inglês
10.1063/1.2172293
ISSN1520-8842
AutoresE. Heumann, Sebastian Bär, K. Rademaker, G. Hüber, S.D. Butterworth, A. Diening, Wolf Seelert,
Tópico(s)Luminescence Properties of Advanced Materials
ResumoA high-power optically pumped semiconductor laser operating around 970 nm has been used as a pumping source for an upconversion laser based on an Er3+ doped LiLuF4 crystal. Nearly 0.5 W of continuous wave (cw) output power and 0.8 W peak power at a 50% pump duty cycle could be achieved at a wavelength of 552 nm. This represents the highest output power from a room temperature upconversion laser ever reported. Laser threshold and slope efficiency were measured to be below 100 mW of absorbed pump power and 30%, respectively. This experiment could be an important step along the route to realizing a compact and efficient upconversion laser emitting in the Watt level power regime.
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