Identification of the ferroelectric switching process and dopant-dependent switching properties in orthorhombic HfO2: A first principles insight
2014; American Institute of Physics; Volume: 104; Issue: 9 Linguagem: Inglês
10.1063/1.4867975
ISSN1520-8842
AutoresSergiu Clima, Dirk J. Wouters, Christoph Adelmann, Tony Schenk, Uwe Schroeder, M. Jurczak, Geoffrey Pourtois,
Tópico(s)Advanced Memory and Neural Computing
ResumoThe origin of the ferroelectric polarization switching in orthorhombic HfO2 has been investigated by first principles calculations. The phenomenon can be regarded as being the coordinated displacement of four O ions in the orthorhombic unit cell, which can lead to a saturated polarization as high as 53 μC/cm2. We show the correlation between the computed polarization reversal barrier and the experimental coercive fields.
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