Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE
1999; Elsevier BV; Volume: 43; Issue: 8 Linguagem: Inglês
10.1016/s0038-1101(99)00079-9
ISSN1879-2405
AutoresYasuyuki Miyamoto, H Tobita, K. Oshima, K. Furuya,
Tópico(s)Semiconductor Lasers and Optical Devices
ResumoGaInAs/AlAs/InP resonant tunnelling diodes with three different barrier thicknesses (3.5, 5.3, and 7 nm) were fabricated by metalorganic vapor phase epitaxy and the barrier thickness dependence of the peak current density was measured. The range of peak current was from 100 to 0.1 A/cm2. In the measurement of peak current density distribution, the deviations of peak current density became larger when the barrier became thicker. This fluctuation of peak current density can be explained by the thickness fluctuation of the barrier in the wafer’s millimeter range.
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