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A new approach to bipolar device modeling for CAD

1972; Institute of Electrical and Electronics Engineers; Volume: 60; Issue: 6 Linguagem: Inglês

10.1109/proc.1972.8765

1558-2256

J.G. Fossum,

Advancements in Semiconductor Devices and Circuit Design

A new approach to modeling which yields accurate large-signal models for bipolar devices, including all important fundamental effects and their interactions, is introduced. The resulting models lend themselves to efficient analysis by SCEPTRE while demonstrating substantial exactness. Steady-state transistor-model characteristics depicting general capabilities of the modeling technique are presented.