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Local measurement of semiconductor band bending and surface charge using Kelvin probe force microscopy

2004; Elsevier BV; Volume: 574; Issue: 2-3 Linguagem: Inglês

10.1016/j.susc.2004.10.042

1879-2758

Shimon Saraf, Y. Rosenwaks,

Nanowire Synthesis and Applications

We report on a direct local measurement of surface charge and band bending in semiconductors using Kelvin probe force microscopy. The method is based on cross-sectional surface potential measurements of asymmetric p++n or n++p junctions. A two-dimensional analysis of the junction, combined with a three-dimensional analysis of the tip–sample electrostatic interaction gives surface band bending of 0.32 eV and charge density of 8.63 × 1010 q cm−2 (where q is the elementary charge) on the surface (1 1 0) of air cleaved Si.