The growth of AlN films composed of silkworm-shape grains and the orientation mechanism
2002; Elsevier BV; Volume: 53; Issue: 4-5 Linguagem: Inglês
10.1016/s0167-577x(01)00509-2
ISSN1873-4979
AutoresBo Wang, Mei Wang, Wang Ru-Zhi, Huang Anping, Hua Zhou, ZOU YUN-JUAN, Hui Yan, Wong Seiping,
Tópico(s)Metal and Thin Film Mechanics
ResumoThe oriented aluminum nitride (AlN) films on Si (100) substrates were prepared by reactive magnetron sputtering. It was found that with a low sputtering pressure, it has a high nucleation rate and the (001)-oriented grains are dominant in films. With a high sputtering pressure, the film is mainly consisted of the (100)- and (110)-oriented grains. In the images of atomic force microscopy, the grains show a silkworm-like shape and their long axis is directed along the c-axis of hexagonal AlN. The mechanism about the orientation and the silkworm shape grains were discussed.
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