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Micromachined RF passive components and their applications in MMICs

1999; Wiley; Volume: 9; Issue: 4 Linguagem: Inglês

10.1002/(sici)1099-047x(199907)9

1096-4290

Yanling Sun, Joseph L. Tauritz, Roel Baets,

GaN-based semiconductor devices and materials

International Journal of RF and Microwave Computer-Aided EngineeringVolume 9, Issue 4 p. 310-325 Micromachined RF passive components and their applications in MMICs Yanling Sun, Corresponding Author Yanling Sun ylsun@lucent.com Bell Labs Utrecht, Lucent Technologies, Zadelstede 1-10, 3431 JZ Nieuwegein, The NetherlandsBell Labs Utrecht, Lucent Technologies, Zadelstede 1-10, 3431 JZ Nieuwegein, The NetherlandsSearch for more papers by this authorJoseph L. Tauritz, Joseph L. Tauritz Delft Institute of Microelectronics and Submicrontechnology (DIMES), Delft University of Technology, Feldmannweg 17, 2600 GB Delft, The NetherlandsSearch for more papers by this authorRoel G. F. Baets, Roel G. F. Baets Department of Information Technology, University of Gent,—IMEC Sint—Petersnieuwstraat 41, B-9000 Gent, BelgiumSearch for more papers by this author Yanling Sun, Corresponding Author Yanling Sun ylsun@lucent.com Bell Labs Utrecht, Lucent Technologies, Zadelstede 1-10, 3431 JZ Nieuwegein, The NetherlandsBell Labs Utrecht, Lucent Technologies, Zadelstede 1-10, 3431 JZ Nieuwegein, The NetherlandsSearch for more papers by this authorJoseph L. Tauritz, Joseph L. Tauritz Delft Institute of Microelectronics and Submicrontechnology (DIMES), Delft University of Technology, Feldmannweg 17, 2600 GB Delft, The NetherlandsSearch for more papers by this authorRoel G. F. Baets, Roel G. F. Baets Department of Information Technology, University of Gent,—IMEC Sint—Petersnieuwstraat 41, B-9000 Gent, BelgiumSearch for more papers by this author First published: 28 May 1999 https://doi.org/10.1002/(SICI)1099-047X(199907)9:4 3.0.CO;2-9Citations: 9AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onFacebookTwitterLinked InRedditWechat Abstract The design, fabrication, and characterization of micromachined RF passive components, including spiral inductors, Q- and L-enhanced inductors, and MIM capacitors, monolithically realized on suspended membranes in an fT=15 GHz silicon bipolar process (DIMES-03) are described. The performance of active inductors, active resonators, and oscillators incorporating suspended-membrane components is compared to that of conventional MMIC circuit realization. ©1999 John Wiley & Sons, Inc. Int J RF and Microwave CAE 9: 310–325, 1999. Citing Literature Volume9, Issue4Special Issue: RF Applications of MEMs TechnologyJuly 1999Pages 310-325 RelatedInformation