Highly conductive SiC ceramics containing Ti2CN
2013; Elsevier BV; Volume: 34; Issue: 5 Linguagem: Inglês
10.1016/j.jeurceramsoc.2013.11.001
ISSN1873-619X
AutoresKwang Joo Kim, Kun Mo Kim, Young‐Wook Kim,
Tópico(s)Aluminum Alloys Composites Properties
ResumoHighly conductive SiC ceramics were fabricated by sintering β-SiC and TiN powder mixture in N2 atmosphere. SiC ceramics exhibited decreased electrical resistivity (ρ) with increasing TiN content. X-ray diffraction data indicated that the specimens consisted of β-SiC grains without a detectible secondary phase for low TiN content (≤2 vol%) but contained a Ti2CN phase as the TiN content increased. The temperature-dependent resistivity ρ(T) of specimens revealed semiconductor-like behavior for TiN content up to 10 vol% and metal-like behavior above 20 vol%. For the specimen with TiN content of 15 vol%, ρ(T) remained almost constant (2.06 ± 0.01 × 10−3 Ω cm) in the 4–300 K range. The resistivity of metal-like specimens were as low as 3.5 × 10−4 Ω cm for TiN content of 20 vol%. For semiconductor-like specimens, ρ(T) was primarily affected by N donors in the β-SiC grains. Metal-like specimens were primarily affected by metallic Ti2CN clusters.
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