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Refractive index of Ga1−xAlxAs

1974; Elsevier BV; Volume: 15; Issue: 1 Linguagem: Inglês

10.1016/0038-1098(74)90014-3

1879-2766

Martin A. Afromowitz,

Semiconductor Quantum Structures and Devices

A semi-empirical method for calculating the room temperature refractive index of Ga1−xAlxAs at energies below the direct band edge is presented. This quantity is important in the design of GaAs heterostructure lasers as well as other wave-guiding devices using these materials. The calculated values compare favorably with recent data. The method is shown to be useful for the Ga1−xAsxP system as well.