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Dielectric properties of lead lanthanum zirconate stanate titanate antiferroelectric thin films prepared by pulsed laser deposition

2004; American Institute of Physics; Volume: 95; Issue: 11 Linguagem: Inglês

10.1063/1.1715136

1520-8850

Yingbang Yao, Jiwei Zhai, Haydn Chen,

Multiferroics and related materials

Lead lanthanum zirconate stanate titanate (PLZST) thin films of approximately 200 nm in thickness were deposited on Pt-buffered silicon substrates using pulsed laser deposition method. The samples were prepared under different substrate temperatures but with the same oxygen partial pressure of 0.2 mbar and laser fluence of approximately 4 J/cm2. We found that the Pb loss during the deposition process plays an important role in the formation of perovskite phase. Postdeposition annealing under different oxygen pressure, ranging from 0.2 mbar to atmospheric oxygen pressure but for the same annealing duration (15 min), was carried out in order to clarify the effects of the annealing ambient, from the viewpoint of crystallographic structure as well as electrical and dielectric properties. The physical origin is discussed.