Navigation aids in the search for future high-k dielectrics: Physical and electrical trends
2007; Elsevier BV; Volume: 51; Issue: 4 Linguagem: Inglês
10.1016/j.sse.2007.02.021
ISSN1879-2405
AutoresOlof Engström, Bahman Raeissi, S. Hall, O. Buiu, Max C. Lemme, H.D.B. Gottlob, Paul K. Hurley, K. Cherkaoui,
Tópico(s)Ferroelectric and Negative Capacitance Devices
ResumoFrom experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.
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