Artigo Revisado por pares

Navigation aids in the search for future high-k dielectrics: Physical and electrical trends

2007; Elsevier BV; Volume: 51; Issue: 4 Linguagem: Inglês

10.1016/j.sse.2007.02.021

ISSN

1879-2405

Autores

Olof Engström, Bahman Raeissi, S. Hall, O. Buiu, Max C. Lemme, H.D.B. Gottlob, Paul K. Hurley, K. Cherkaoui,

Tópico(s)

Ferroelectric and Negative Capacitance Devices

Resumo

From experimental literature data on metal oxides combined with theoretical estimates, we present empirical relations for k-values and energy band offset values, that can be used in the search for gate dielectric materials fulfilling the needs of future CMOS generations. Only a few materials investigated so far have properties meeting the demands for k and energy band offset values in the development of CMOS down to 22 nm.

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