Surface core levels of the 3 C SiC(001)3×2 surface: Atomic origins and surface reconstruction
1997; American Physical Society; Volume: 56; Issue: 24 Linguagem: Inglês
10.1103/physrevb.56.r15525
ISSN1095-3795
AutoresHan Woong Yeom, Yimin Chao, Shin Terada, Shiro Hara, S. Yoshida, R. I. G. Uhrberg,
Tópico(s)Copper Interconnects and Reliability
ResumoThe Si-rich $3C$-SiC(001)3\ifmmode\times\else\texttimes\fi{}2 surface has been studied by high-resolution core-level photoemission. Well-resolved Si $2p$ and C $1s$ core-level spectra were measured at a temperature of \ensuremath{\sim}120 K. Three different Si $2p$ surface components are clearly identified with binding energy shifts of -0.58\ifmmode\pm\else\textpm\fi{}0.03, -0.92\ifmmode\pm\else\textpm\fi{}0.03, and -1.27\ifmmode\pm\else\textpm\fi{}0.03 eV, respectively. The presence of these components and their intensity ratios are consistent with a structure model with $$$\frac{2}{3}$ monolayer (ML) of additional Si dimers but incompatible with another model with only $\frac{1}{3}$ ML of Si dimers. Assignments have been made of the atomic origins of the Si $2p$ surface core levels and the line shape of the C $1s$ core level is discussed.
Referência(s)