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Monolithic integration of a silica AWG and Ge photodiodes on Si photonic platform for one-chip WDM receiver

2012; Optica Publishing Group; Volume: 20; Issue: 8 Linguagem: Inglês

10.1364/oe.20.009312

1094-4087

Hidetaka Nishi, Tai Tsuchizawa, Rai Kou, Hiroyuki Shinojima, Takashi Yamada, Hideaki Kimura, Yasuhiko Ishikawa, Kazumi Wada, Koji Yamada,

Semiconductor Lasers and Optical Devices

On the silicon (Si) photonic platform, we monolithically integrated a silica-based arrayed-waveguide grating (AWG) and germanium (Ge) photodiodes (PDs) using low-temperature fabrication technology. We confirmed demultiplexing by the AWG, optical-electrical signal conversion by Ge PDs, and high-speed signal detection at all channels. In addition, we mounted a multichannel transimpedance amplifier/limiting amplifier (TIA/LA) circuit on the fabricated AWG-PD device using flip-chip bonding technology. The results show the promising potential of our Si photonic platform as a photonics-electronics convergence.