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Near IR and UV Enhanced Photoresponse of C60-Doped Semiconducting Polymer Photodiode

1999; Volume: 11; Issue: 16 Linguagem: Inglês

10.1002/(sici)1521-4095(199911)11

1521-4095

K. Yoshino, S. Lee, Akihiko Fujii, Hiromasa Nakayama, W. Schneider, Akinobu Naka, Mitsuo Ishikawa,

Perovskite Materials and Applications

Advanced MaterialsVolume 11, Issue 16 p. 1382-1385 Communication Near IR and UV Enhanced Photoresponse of C60-Doped Semiconducting Polymer Photodiode K. Yoshino, K. Yoshino Institute for Fundamental Chemistry, 34–4 Takano-nishihiraki-cho, Sakyo-ku, Kyoto 606–8103 (Japan)Search for more papers by this authorS. Lee, S. Lee Institute for Fundamental Chemistry, 34–4 Takano-nishihiraki-cho, Sakyo-ku, Kyoto 606–8103 (Japan)Search for more papers by this authorA. Fujii, A. Fujii Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565–0871 (Japan)Search for more papers by this authorH. Nakayama, H. Nakayama Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565–0871 (Japan)Search for more papers by this authorW. Schneider, W. Schneider Department of Chemical Technology, Kurashiki University of Science and the Arts 2640 Tsurajima, Nishinoura, Kurashiki 712–8505 (Japan)Search for more papers by this authorA. Naka, A. Naka Department of Chemical Technology, Kurashiki University of Science and the Arts 2640 Tsurajima, Nishinoura, Kurashiki 712–8505 (Japan)Search for more papers by this authorM. Ishikawa, M. Ishikawa Department of Chemical Technology, Kurashiki University of Science and the Arts 2640 Tsurajima, Nishinoura, Kurashiki 712–8505 (Japan)Search for more papers by this author K. Yoshino, K. Yoshino Institute for Fundamental Chemistry, 34–4 Takano-nishihiraki-cho, Sakyo-ku, Kyoto 606–8103 (Japan)Search for more papers by this authorS. Lee, S. Lee Institute for Fundamental Chemistry, 34–4 Takano-nishihiraki-cho, Sakyo-ku, Kyoto 606–8103 (Japan)Search for more papers by this authorA. Fujii, A. Fujii Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565–0871 (Japan)Search for more papers by this authorH. Nakayama, H. Nakayama Department of Electronic Engineering, Faculty of Engineering, Osaka University, 2–1 Yamada-Oka, Suita, Osaka 565–0871 (Japan)Search for more papers by this authorW. Schneider, W. Schneider Department of Chemical Technology, Kurashiki University of Science and the Arts 2640 Tsurajima, Nishinoura, Kurashiki 712–8505 (Japan)Search for more papers by this authorA. Naka, A. Naka Department of Chemical Technology, Kurashiki University of Science and the Arts 2640 Tsurajima, Nishinoura, Kurashiki 712–8505 (Japan)Search for more papers by this authorM. Ishikawa, M. Ishikawa Department of Chemical Technology, Kurashiki University of Science and the Arts 2640 Tsurajima, Nishinoura, Kurashiki 712–8505 (Japan)Search for more papers by this author First published: 03 November 1999 https://doi.org/10.1002/(SICI)1521-4095(199911)11:16 3.0.CO;2-TCitations: 18AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstract The efficient photoinduced charge transfer between conducting polymers and C60 makes this donor–acceptor system an attractive target for use in optoelectronic devices. These authors have fabricated a semiconducting polymer photodiode synthesized from a new C60-doped semiconducting disilanylene–thienylene polymer. The device shows high spectral sensitivity that extended far below the absorption edge into the near infrared region. The absorption spectra are analyzed and discussed in terms of the polymer structure, and in terms of electron–hole mobilities. References 1 S. Morita, A. A. Zakhidov, K. Yoshino, Solid State Commun. 1992, 82, 249. 10.1016/0038-1098(92)90636-N CASWeb of Science®Google Scholar 2 N. S. Sariciftci, L. Smilowitz, A. J. Heeger, F. Wudl, Solid. State common. 1992, 258, 1474. CASWeb of Science®Google Scholar 3a S. Morita, A. A. Zakhidov, K. Yoshino, Jpn. J. Appl. Phys. 1993 32, L873. 10.1143/JJAP.32.L873 CASWeb of Science®Google Scholarb K. Yoshino, K. Tada, A. Fujii, E. M. Conwell, A. A. Zakhidov, IEEE Trans. Electron Devices 1997, 44, 1315. 10.1109/16.605474 CASWeb of Science®Google Scholar 4a N. S. Sariciftci, D. Braun, C. 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