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Hole centres in n-GaS

1980; Wiley; Volume: 58; Issue: 2 Linguagem: Inglês

10.1002/pssa.2210580234

1521-396X

C. De Blasi, S. Galassini, G. Micocci, A. Tepore, C. Manfredotti,

Solid-state spectroscopy and crystallography

physica status solidi (a)Volume 58, Issue 2 p. 609-613 Original Paper Hole centres in n-GaS C. de Blasi, C. de Blasi Institute of Physics, University of Lecce Search for more papers by this authorS. Galassini, S. Galassini Institute of Physics, University of Lecce Search for more papers by this authorG. Micocci, G. Micocci Institute of Physics, University of Lecce Search for more papers by this authorA. Tepore, A. Tepore Institute of Physics, University of Lecce Search for more papers by this authorC. Manfredotti, C. Manfredotti Institute of Physics, University of TorinoSearch for more papers by this author C. de Blasi, C. de Blasi Institute of Physics, University of Lecce Search for more papers by this authorS. Galassini, S. Galassini Institute of Physics, University of Lecce Search for more papers by this authorG. Micocci, G. Micocci Institute of Physics, University of Lecce Search for more papers by this authorA. Tepore, A. Tepore Institute of Physics, University of Lecce Search for more papers by this authorC. Manfredotti, C. Manfredotti Institute of Physics, University of TorinoSearch for more papers by this author First published: 16 April 1980 https://doi.org/10.1002/pssa.2210580234Citations: 7 Via Arnesano, 73100 Lecce, Italy. AboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Share a linkShare onEmailFacebookTwitterLinkedInRedditWechat Abstracten Hole trapping centres of GaS grown by the Bridgman method are investigated by using the thermal quenching (TQ) and the spectral response of the photoconductivity. Four hole centres at 0.20, 0.53, 0.78, and 0.94 eV above the valence band are evidenced. The present results are discussed and compared with similar results obtained by other authors by using different techniques. Abstractde Löchertrapping-Zentren von GaS, das mit dem Bridgman-Verfahren gezogen wurde, wird mittels thermischer Tilgung (TQ) und der spektralen Abhängigkeit der Photoleitung untersucht. Vier Löcherzentren bei 0,20; 0,53; 0.78 und 0,94 eV oberhalb des Valenzbandes werden nachgewiesen. Die vorgelegten Ergebnisse werden diskutiert und mit ähnlichen Ergebnissen verglichen, die von anderen Autoren mittels anderer Techniken erhalten wurden. References 1 C. Manfredotti, C. De Blasi, S. Galassini, G. Micocci, L. Ruggiero, and A. Tepore, Solid State Commun. 18, 1063 (1976). 10.1016/0038-1098(76)91240-0 CASWeb of Science®Google Scholar 2 C. De Blasi, S. Galassini, C. Manfredotti, G. Micocci, L. Ruggiero, and A. Tepore, phys. stat. sol. (a) 55, 291 (1979). 10.1002/pssa.2210550133 CASWeb of Science®Google Scholar 3 C. Manfredotti, R. Murri, A. Rizzo, and L. Vasanelli, Solid State Commun. 19, 339 (1976). 10.1016/0038-1098(76)91346-6 CASWeb of Science®Google Scholar 4 C. Manfredotti, A. Rizzo, A. Bufo, and V. L. Cardetta, phys. stat. sol. (a) 30, 375 (1975). 10.1002/pssa.2210300139 CASWeb of Science®Google Scholar 5 R. H. Bube and E. L. Lind, Phys. Rev. 110, 1040 (1958). 10.1103/PhysRev.110.1040 CASWeb of Science®Google Scholar 6 M. Springford, Proc. Phys. Soc. 82, 1020 (1963). 10.1088/0370-1328/82/6/323 CASWeb of Science®Google Scholar 7 I. M. Catalano, M. Ferrara, and P. Tantalo, phys. stat. sol. (a) 20, K135 (1973). 10.1002/pssa.2210200250 CASWeb of Science®Google Scholar Citing Literature Volume58, Issue216 April 1980Pages 609-613 ReferencesRelatedInformation