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Ambipolar Oxide Thin‐Film Transistor

2011; Volume: 23; Issue: 30 Linguagem: Inglês

10.1002/adma.201101410

1521-4095

Kenji Nomura, Toshio Kamiya, Hideo Hosono,

Semiconductor materials and devices

Advanced MaterialsVolume 23, Issue 30 p. 3431-3434 Communication Ambipolar Oxide Thin-Film Transistor Kenji Nomura, Corresponding Author Kenji Nomura [email protected] Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanFrontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.Search for more papers by this authorToshio Kamiya, Toshio Kamiya Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanSearch for more papers by this authorHideo Hosono, Hideo Hosono Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanSearch for more papers by this author Kenji Nomura, Corresponding Author Kenji Nomura [email protected] Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanFrontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan.Search for more papers by this authorToshio Kamiya, Toshio Kamiya Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanSearch for more papers by this authorHideo Hosono, Hideo Hosono Frontier Research Center, Mail Box S2-13, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan Materials and Structures Laboratory, Mail Box R3-1, Tokyo Institute of Technology, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, JapanSearch for more papers by this author First published: 01 July 2011 https://doi.org/10.1002/adma.201101410Citations: 225Read the full textAboutPDF ToolsRequest permissionExport citationAdd to favoritesTrack citation ShareShare Give accessShare full text accessShare full-text accessPlease review our Terms and Conditions of Use and check box below to share full-text version of article.I have read and accept the Wiley Online Library Terms and Conditions of UseShareable LinkUse the link below to share a full-text version of this article with your friends and colleagues. Learn more.Copy URL Graphical Abstract The first ambipolar oxide-based thin-film transistor (TFT) using an SnO channel is presented, demonstrating operation of a complementary-like inverter configured by two ambipolar SnO TFTs. Saturation mobilities of 0.8 and 5 × 10−4 cm2 V−1s−1 are obtained for the p-channel and n-channel modes, respectively, and the inverter shows a maximum voltage gain of 2.5. This is the first demonstration of a complementary-like circuit using a single oxide semiconductor channel and provides an important step toward practical oxide electronics. References 1 K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, H. Hosono, Nature 2004, 432, 488. 2 J. F. Wager, D. A. Keszler, R. E. Presley, Transparent Electronics, Springer, New York 2008. 3 A. Tsukazaki, A. Ohtomo, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, M. Kawasaki, Nat. Mater. 2005, 4, 42. 4 Handbook of Transparent Conductors, (Eds: D. 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Filename Description adma_201101410_sm_suppl.pdf244.5 KB suppl Please note: The publisher is not responsible for the content or functionality of any supporting information supplied by the authors. Any queries (other than missing content) should be directed to the corresponding author for the article. Volume23, Issue30August 9, 2011Pages 3431-3434 ReferencesRelatedInformation