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Terahertz time-domain spectroscopy characterization of the far-infrared absorption and index of refraction of high-resistivity, float-zone silicon

2004; Optica Publishing Group; Volume: 21; Issue: 7 Linguagem: Inglês

10.1364/josab.21.001379

1520-8540

Jianming Dai, Jiangquan Zhang, Weili Zhang, D. Grischkowsky,

Semiconductor Quantum Structures and Devices

The far-infrared absorption and index of refraction of high-resistivity, float-zone, crystalline silicon has been measured by terahertz time-domain spectroscopy. The measured new upper limit for the absorption of this most transparent dielectric material in the far infrared shows unprecedented transparency over the range from 0.5 to 2.5 THz and a well-resolved absorption feature at 3.6 THz. The index of refraction shows remarkably little dispersion, changing by only 0.0001 over the range from 0.5 to 4.5 THz.