Photoluminescence of modulation-doped ordered–disordered GaInP2 homojunctions: Intrinsic versus extrinsic emissions
1995; American Institute of Physics; Volume: 66; Issue: 5 Linguagem: Inglês
10.1063/1.114021
ISSN1520-8842
AutoresF. A. J. M. Driessen, P.R. Hageman, S. M. Olsthoorn, L.J. Giling,
Tópico(s)Semiconductor materials and interfaces
ResumoPhotoluminescence (PL) measurements are reported on modulation-doped ordered-GaInP2/ disordered-GaInP2 homojunctions. These junctions exhibit extremely high carrier densities of the two-dimensional (2D) electron gas. A luminescence peak that involves recombination of these intrinsic 2D electrons and photoexcited holes shows a very large redshift as a result of the spatially separated carriers. However, no inverted S shaped behavior of PL energy is observed for this signal upon increasing temperature. This result affirms that the inverted S PL behavior of bulk ordered GaInP2 has an extrinsic nature.
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