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Si and Ge gas-source molecular beam epitaxy (GSMBE)

1991; Elsevier BV; Volume: 107; Issue: 1-4 Linguagem: Inglês

10.1016/0022-0248(91)90595-v

1873-5002

Maki Suemitsu, Fumihiko Hirose, Nobuo Miyamoto,

Diamond and Carbon-based Materials Research

Abstract Growth using Si and Ge gas-source molecular beam epitaxy (GSMBE) has been studied. Selective epitaxy which occurs in both GSMBE systems has enabled precise measurements of growth rate to be made. Effects of varying growth temperature, the Si- or Ge-bearing gas pressure, and co-irradiation with 147 nm vacuum ultraviolet photons were investigated in detail. The role of substrate misorientation on growth has also been clarified. Possible models for the growth kinetics for both systems are presented and discussed.