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Preparation of highly conductive, deep ultraviolet transparent β-Ga2O3 thin film at low deposition temperatures

2002; Elsevier BV; Volume: 411; Issue: 1 Linguagem: Inglês

10.1016/s0040-6090(02)00202-x

1879-2731

Masahiro Orita, Hidenori Hiramatsu, Hiromichi Ohta, Masahiro Hirano, Hideo Hosono,

Advanced Photocatalysis Techniques

β-Ga2O3 is a unique oxide that exhibits deep ultraviolet transparency as well as good electric conductivity when dopants are introduced. With the purpose of realizing highly conductive films using this material, tin doped Ga2O3 films were deposited on Al2O3 (0001) substrates by the pulsed laser deposition method. (2̄01) oriented β-phase films were grown at substrate temperatures of between 380 °C and 435 °C, and deep ultraviolet transparent films with a conductivity as high as 8.2 S cm−1 were obtained at 380 °C under laser ablation with a low repetition rate of 1 Hz. With a further increase in the deposition temperature, the films underwent a crystalline phase transition, accompanied by an abrupt decrease in conductivity.