Dynamic charge storage in 6H silicon carbide
1992; American Institute of Physics; Volume: 61; Issue: 10 Linguagem: Inglês
10.1063/1.107641
ISSN1520-8842
AutoresChester Thad Gardner, James A. Cooper, M. R. Melloch, John W. Palmour, C. H. Carter,
Tópico(s)Semiconductor materials and interfaces
Resumopn-junction storage capacitors have been fabricated in 6H silicon carbide. The charge decay is dominated by surface generation at the mesa edges, and the storage time strongly depends on the method of surface passivation. Charge recovery is thermally activated. Devices passivated by dry oxidation and by wet oxidation exhibit activation energies of 0.66 and 1.48 eV, respectively. As a figure of merit, extrapolation of the dry-oxide data gives a room-temperature storage time of 106 s, while extrapolation of the wet-oxide data gives a room-temperature storage time of 1014 s.
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