Amphoteric trap modeling of multidielectric scaled SONOS nonvolatile memory structures
1987; Elsevier BV; Volume: 30; Issue: 1-4 Linguagem: Inglês
10.1016/0169-4332(87)90089-4
ISSN1873-5584
AutoresFrank Libsch, Anirban Roy, Marvin H. White,
Tópico(s)Advancements in Semiconductor Devices and Circuit Design
ResumoWe have characterized multidielectric scaled SONOS nonvolatile memory structures with the quasi-static linear voltage ramp (LVR) technique and dynamic pulse measurements. We have formulated physically-based ERASE/WRITE and retention methods with deep level amphoteric traps which capture and emit carriers to the bands in the silicon nitride film. Amphoteric trap parameters are extracted by the LVR technique. ERASE/WRITE and retention amphoteric trap model simulations agree well with the experimental dynamic pulse measurements. Experimental scaled SONOS structures have been fabricated with tunnel oxide XOT=20 Å, nitride XN=30 Å and blocking oxide XOB=55 Å and demonstrated a static flatband shift of 3.6 V with ±5 V programming voltages. These structures may be used as the nonvolatile memory element in high density VLSI circuits.
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