Interface chemistry of WN/4H–SiC structures
1999; Elsevier BV; Volume: 151; Issue: 3-4 Linguagem: Inglês
10.1016/s0169-4332(99)00277-9
ISSN1873-5584
AutoresA. Kakanakova‐Georgieva, Liliana Kassamakova, Ts. Marinova, Roumen Kakanakov, O. Noblanc, C. Arnodo, S. Cassette, C. Brylinski,
Tópico(s)Semiconductor materials and devices
ResumoThe interface chemistry of WN/4H–SiC structures has been studied by means of X-ray photoelectron spectroscopy (XPS). XPS investigations have been performed on as deposited, 800°C and 1200°C annealed (4 min) samples. The as deposited and 800°C annealed samples are characterized by chemically inert interfaces. Complete nitrogen out-diffusion from the WN layer, significant carbon diffusion into the contact layer, tungsten carbide and tungsten silicide formation occur during the 1200°C annealing process. The 800°C annealed WN/4H–SiC contacts are found to be of a Schottky type with a barrier height of 0.91 eV. The Schottky barrier height and the ideality factor show no significant changes during 100 h storage at 500°C under nitrogen and during operation at increasing temperature up to 350°C in air.
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