An accurate absolute scattering factor for silicon
1969; International Union of Crystallography; Volume: 25; Issue: 1 Linguagem: Inglês
10.1107/s0567739469000210
ISSN1600-8596
Autores Tópico(s)X-ray Spectroscopy and Fluorescence Analysis
ResumoThe 220 Bragg reflexion of silicon has been studied in considerable detail. By the Pendellösung fringe method we have measured the atomic scattering factor with an internal consistency of better than 0.1%. Particular care was taken to exclude systematic errors which might arise from elastic strain, X-ray absorption and X-ray polarization effects. The crystal was cut parallel to the Bragg planes at the points of observation so that its thickness could be directly measured with a travelling microscope. At the value of sinθ/λ corresponding to the 220 Bragg reflexion, the experimental atomic scattering factors (20°C) were: f = 8.478 ± 0.008 for Mo Kα1 radiation; f = 8.448 ± 0.012 for Ag Kα1 radiation, and f (Mo Kα1)/f (Ag Kα1) = 1.0035 ± 0.0007.
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