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High-Performance High-$k$$\hbox{Y}_{2}\hbox{O}_{3}$ SONOS-Type Flash Memory

2008; Institute of Electrical and Electronics Engineers; Volume: 55; Issue: 9 Linguagem: Inglês

10.1109/ted.2008.927401

1557-9646

Tung-Ming Pan, Wen-Wei Yeh,

Electronic and Structural Properties of Oxides

In this paper, we propose a novel high-k Y 2 O 3 poly-Si-oxide-nitride-oxide-silicon (SONOS)-type flash memory. The structural and morphological features of Y 2 O 3 films were studied using atomic force microscopy, transmission electron microscopy, and X-ray photoelectron spectroscopy. These high-k Y 2 O 3 SONOS-type memories exhibited large threshold voltage shifting (memory window of 1.9-4.33 V), almost negligible read and gate disturb (threshold voltage shift of ~2-mV operation at V G = 3 V and V D = 4 V and ~4-mV operation at V G =8 V, respectively), excellent data retention (charge loss of ~4% measured time up to 10 4 s and at room temperature, expected ~22% charge loss for ten years at 125degC), and superior endurance characteristics (program/erase cycles up to 10 5 ) because of the higher probability for trapping charge carriers. These Y 2 O 3 films appear to be a very promising charge trapping layer for high-density two-bit nonvolatile flash memory applications.