Precursor molecular-oxygen state in the initial catalytic oxidation of the InP(110) surface modified by alkali metals
1988; American Physical Society; Volume: 37; Issue: 11 Linguagem: Inglês
10.1103/physrevb.37.6496
ISSN1095-3795
AutoresP. Soukiassian, M. H. Bakshi, H. I. Starnberg, Arun Bommannavar, Z. Hurych,
Tópico(s)Semiconductor Quantum Structures and Devices
ResumoThe kinetics and the mechanism of the oxidation of the InP(110) surface modified by a cesium monolayer have been studied by valence-band and core-level photoemission spectroscopy using synchrotron radiation. The presence of a Cs monolayer on the InP(110) surface leads to an exceptional enhancement of the oxidation rate by 13 orders of magnitude with formation of phosphates such as ${\mathrm{InPO}}_{4}$. In strong contrast with cesiated transition-metal surfaces, we find a precursor state of molecular oxygen prior to the onset of InP(110) oxidation. At higher exposures, both molecular- and atomic-oxygen states coexist in a dynamic equilibrium.
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