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Absorption coefficient and electric-field-induced localization in InAs-AlGaSb multi-quantum well structures

1994; IOP Publishing; Volume: 9; Issue: 12 Linguagem: Inglês

10.1088/0268-1242/9/12/008

1361-6641

Kam‐Bo Wong, Geri Gopir, J. P. Hagon, M. Jaroš,

Chalcogenide Semiconductor Thin Films

We present full-scale calculations of the optical absorption coefficient of a type-II InAs-AlGaSb superlattice at wavelengths around 10 mu m. We show that the optical matrix element responsible for such infrared absorption depends on a delicate balance between the electron-hole wavefunction overlap and the structural parameters. We also present a full description of the effect of electric-field-induced localization on optical spectra in this range of wavelengths.