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The influence of SiOx and SiNx passivation on the negative bias stability of Hf–In–Zn–O thin film transistors under illumination

2010; American Institute of Physics; Volume: 96; Issue: 26 Linguagem: Inglês

10.1063/1.3435482

1520-8842

Joon Seok Park, Tae Sang Kim, Kyoung Seok Son, Kwanghee Lee, W. J. Maeng, Hyun‐Suk Kim, Eok Su Kim, Kyung‐Bae Park, Jong‐Baek Seon, Woong Choi, Myung Kwan Ryu, Sangyoon Lee,

ZnO doping and properties

The stability of hafnium indium zinc oxide thin film transistors under negative bias stress with simultaneous exposure to white light was evaluated. Two different inverted staggered bottom gate devices, each with a silicon oxide and a silicon nitride passivation, were compared. The latter exhibits higher field effect mobility but inferior subthreshold swing, and undergoes more severe shifts in threshold voltage (VT) during negative bias illumination stress. The time evolution of VT fits the stretched exponential equation, which implies that hydrogen incorporation during the nitride growth has generated bulk defects within the semiconductor and/or at the semiconductor/gate dielectric interface.