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An examination of the product-catalyzed reaction of trimethylgallium with arsine

1976; Elsevier BV; Volume: 114; Issue: 1 Linguagem: Inglês

10.1016/s0022-328x(00)87346-5

1872-8561

D. J. Schlyer, M. A. Ring,

Advanced Chemical Physics Studies

The reaction of (CH3)3Ga with AsH3 at 203°C and 259°C has been examined over the product surfaces which were (CH3)3- GaAsH3-x where the average values of x were 1.1 and 2.2 203°C and 259°C respectively. The surface reaction (catalyzed by the product surface) forming (CH3)2GaAsH2 occurred on the surface between adsorbed molecules of (CH3)3Ga and ASH3. The surface coverages of the reactants (gas pressures between 18 and 36 mmHg) were clearly less than monomolecular and for AsH3 possibly as low as 0.01. For AsH3 at a surface coverage of 0.12, adsorption data were consistent with AsH 3 bound to the surface as a mobile film. The formation of GaAs via CH4 elimination from (CH3)2GaAsH2 or CH3GaAsH was hindered by deposition of films of (CH3)3-x GaAsH3-x even at 420°C. This was most significant for formation of GaAs (or even CH3GaAsH) from (CH3)2-GaAsH2 formed at 203°C and then heated at 420°C. The product surfaces also served as a catalyst for decomposition of AsH3 to form H2 and decomposition of (CH3)3Ga to form CH4.