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Lithographic Graphitic Memories

2009; American Chemical Society; Volume: 3; Issue: 9 Linguagem: Inglês

10.1021/nn9006225

1936-086X

Alexander Sinitskii, James M. Tour,

Nanowire Synthesis and Applications

Reported here are easily accessible memory devices based upon stripes of chemical vapor deposited (CVD) nanosized irregular discs of graphitic material that can be layered in stripes ≤10 nm thick with controllable lengths and widths. These lithographic graphitic stripes, which can be easily fabricated in large quantities in parallel by conventional fabrication techniques (such as CVD and photo- or e-beam lithography), with yields >95%, are shown to exhibit voltage-induced switching behavior, which can be used for two-terminal memories. These memories are stable, rewritable, and nonvolatile with ON/OFF ratios up to 107, switching times down to 1 μs (tested limit), and switching voltages down to 3−4 V. The major functional parameters of these lithographic memories are shown to be scalable with the devices' dimensions.