Probing Strain-Induced Electronic Structure Change in Graphene by Raman Spectroscopy
2010; American Chemical Society; Volume: 10; Issue: 10 Linguagem: Inglês
10.1021/nl102123c
ISSN1530-6992
AutoresMingyuan Huang, Hugen Yan, Tony F. Heinz, James Hone,
Tópico(s)Diamond and Carbon-based Materials Research
ResumoTwo-phonon Raman scattering in graphitic materials provides a distinctive approach to probing the material's electronic structure through the spectroscopy of phonons. Here we report studies of Raman scattering of the two-dimensional mode of single-layer graphene under uniaxial stress and which implicates two types of modification of the low-energy electronic structure of graphene: a deformation of the Dirac cone and its displacement away from the K point.
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