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Increase of Schottky barrier height at GaAs surfaces by carboxylic acid monolayers and multilayers

1985; Institute of Physics; Volume: 18; Issue: 1 Linguagem: Inglês

10.1088/0022-3727/18/1/013

1361-6463

R.H. Tredgold, Z I El-Badawy,

Semiconductor Quantum Structures and Devices

Studies of GaAs photodiodes are described. It is shown that the introduction of a carboxylic acid monolayer between the GaAs and the Au top electrode can increase diode efficiency by up to a factor of 1.24. Further increases can be obtained by the introduction of two further layers using the Langmuir-Blodgett technique.