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Fabrication and Characterization of Diamond-Clad Silicon Field Emitter Arrays

1995; Institute of Physics; Volume: 34; Issue: 12S Linguagem: Inglês

10.1143/jjap.34.6926

1347-4065

Huang‐Chung Cheng, Tzu-Kun Ku, Biing-Bang Hsieh, Sheng-Hsiung Chen, Shye-Yuh Leu, Chih-Chong Wang, Chia-Fu Chen, Iing-Jar Hsieh, J.C.-M. Huang,

Ion-surface interactions and analysis

Microsized silicon tip arrays with sharp curvature were formed based on the techniques including reactive ion etching and oxidation-sbarpening. A new fabrication technology of polycrystalline diamond-clad Si microtips using microwave plasma CVD (MPCVD) was subsequently developed to improve the capability and stability of the field emission from the pure Si tips. By means of SEM and transmission electron microscopy (TEM), the as-deposited films are found to be polycrystalline diamond with fine grain (∼800 Å) structure. With the anode voltage of 1100 V and anode-to-cathode distance of 30 µ m, the emission current of 240 µA in a 50×50 diamond-clad Si microtip array can be achieved, which is much higher than those for Cr-clad and pure Si microtip arrays. Based on curve fitting of a Fowler-Nordheim ( F-N ) plot, such great improvement is partially attributed to the lowering of the effective work function from 5.5 eV to 2.08 eV.