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Lattice distortions in GaAs-AIAs and GaAs-InAs superlattices

1986; Elsevier BV; Volume: 174; Issue: 1-3 Linguagem: Inglês

10.1016/0039-6028(86)90477-2

1879-2758

Hikaru Terauchi, Kousei Kamigaki, Hirofumi Sakashita, Sano Naokatsu, Hiromu Kato, Masaaki Nakayama,

Surface and Thin Film Phenomena

Measurements of X-ray diffraction profiles in GaAs-AlAs and GaAs-InAs superlattices and quantitative analyses of the diffraction patterns have been carried out. The strain field plavs an important role in the superlattices. Especially, the tetragonality in strained GaAs-InAs superlattices, which increases with decreasing GaAs layer size, is well explained by a simple model.