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All-optical NAND gate using cross-gain modulation in semiconductor optical amplifiers

2005; Institution of Engineering and Technology; Volume: 41; Issue: 18 Linguagem: Inglês

10.1049/el

1350-911X

S.H. Kim, Jung‐Hoon Kim, B. G. Yu, Young Tae Byun, Young-Min Jeon, S. Lee, Deok Ha Woo, S.H. Kim,

Photonic and Optical Devices

By using gain nonlinearity characteristics of a semiconductor optical amplifier, an all-optical NAND gate at 10 Gbit/s is demonstrated. The all-optical NAND gate operates in single mechanism, which is cross-gain modulation. In the NAND gate (AB̄+Ā), Boolean AB̄ is obtained by using signal A as a probe beam and signal B as a pump beam in SOA-1. Also, Boolean Ā is obtained by using the clock signal as a probe beam and signal A as a pump beam in SOA-2. By adding the two outputs from SOA-1 and SOA-2, Boolean Ā+AB̄ (logic NAND) can be acquired. The extinction ratio is about 6.1 dB.